 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IRF9620, SIHF9620 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 22 12 10 Single S FEATURES - 200 1.5 * Dynamic dV/dt Rating * P-Channel * Fast Switching * Ease of Paralleling * Simple Drive Requirements * Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G S G D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9620PbF SIHF9620-E3 IRF9620 SIHF9620 ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Maximum Power Dissipation Peak Diode Recovery dV/dtb TC = 25 C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw VGS at - 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT - 200 20 - 3.5 - 2.0 - 14 0.32 40 - 5.0 - 55 to + 150 300c 10 1.1 W/C W V/ns C lbf * in N*m A UNIT V Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. ISD - 3.5 A, dI/dt 95 A/s, VDD VDS, TJ 150 C. c. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91082 S-81272-Rev. A, 16-Jun-08 www.vishay.com 1 IRF9620, SIHF9620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 3.1 C/W UNIT SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 0 V, ID = - 250 A Reference to 25 C, ID = - 1 mA VDS = VGS, ID = - 250 A VGS = 20 V VDS = - 200 V, VGS = 0 V VDS = - 160 V, VGS = 0 V, TJ = 125 C VGS = - 10 V ID = - 1.5 Ab VDS = - 50 V, ID = - 1.5 Ab - 200 - 2.0 1.0 - 0.22 - - 4.0 100 - 100 - 500 1.5 - V V/C V nA A S VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 350 100 30 15 25 20 15 4.5 7.5 22 12 10 nH ns nC pF VGS = - 10 V ID = - 4.0 A, VDS = - 160 V, see fig. 11 and 18b - VDD = - 100 V, ID = - 1.5 A, RG = 50 , RD = 67 , see fig. 17b - Between lead, 6 mm (0.25") from package and center of die contact D - G S - 300 1.9 - 3.5 A - 14 - 7.0 450 2.9 V ns C G S TJ = 25 C, IS = - 3.5 A, VGS = 0 Vb TJ = 25 C, IF = - 3.5 A, dI/dt = 100 A/sb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91082 S-81272-Rev. A, 16-Jun-08 IRF9620, SIHF9620 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Saturation Characteristics Fig. 2 - Typical Transfer Characteristics Fig. 4 - Maximum Safe Operating Area Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Document Number: 91082 S-81272-Rev. A, 16-Jun-08 www.vishay.com 3 IRF9620, SIHF9620 Vishay Siliconix Fig. 6 - Typical Transconductance vs. Drain Current Fig. 9 - Normalized On-Resistance vs. Temperature Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 8 - Breakdown Voltage vs. Temperature Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Document Number: 91082 S-81272-Rev. A, 16-Jun-08 IRF9620, SIHF9620 Vishay Siliconix L Vary tp to obtain required IL D.U.T. VDS V DD EC 0.05 + VGS = - 10 V tp IL VDD = 0.5 VDS EC = 0.75 VDS Fig. 15 - Clamped Inductive Test Circuit VDD IL tp EC VDS Fig. 12 - Typical On-Resistance vs. Drain Current Fig. 16 - Clamped Inductive Waveforms RD VDS VGS RG D.U.T. + - 10 V Pulse width 1 s Duty factor 0.1 % VDD Fig. 13 - Maximum Drain Current vs. Case Temperature Fig. 17a - Switching Time Test Circuit td(on) VGS 10 % tr td(off) tf 90 % VDS Fig. 14 - Power vs. Temperature Derating Curve Fig. 17b - Switching Time Waveforms Document Number: 91082 S-81272-Rev. A, 16-Jun-08 www.vishay.com 5 IRF9620, SIHF9620 Vishay Siliconix Current regulator Same type as D.U.T. 50 k 12 V - 15 V QGS QG 0.2 F 0.3 F QGD VG VGS - 3 mA Charge Fig. 18a - Basic Gate Charge Waveform IG ID Current sampling resistors Fig. 18b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer - + RG * dV/dt controlled by RG * ISD controlled by duty factor "D" * D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % ISD * VGS = - 5 V for logic level and - 3 V drive devices Fig. 19 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91082. www.vishay.com 6 Document Number: 91082 S-81272-Rev. A, 16-Jun-08 + D.U.T. - VDS + - Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SIHF9620
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |